“氧化镓材料与器件”方向代表性论文列表：
12. C.X. Liu, Z.Y. Wu, H.C. Zhai, J. Hoo, S.P. Guo, J. Wan, J.Y. Kang, J.H. Chu, and Z.L. Fang*,
N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded p-n junction by a one-step integrated approach,
J. Mater. Sci. & Tech. 209 (2025) 196-206.（首次报道了氧化镓薄膜线性缓变同质pn结，google引用3次）
11. H.C. Zhai, Z.Y. Wu., K. Xiao, M.Y. Ge, C.X. Liu, P.F. Tian, J. Wan, J.L. Wang, J.Y. Kang, J.H. Chu, and Z.L. Fang*,
p-Type β-Ga2O3 film room-temperature NH3 gas sensors with fast gas sensing and a low limit of detection,
J. Mater. Chem. C 12 (2024) 19526-19535.（p型氧化镓薄膜气敏传感）
10. Y. Zhao, Z.Y. Wu, C.X. Liu, X.F. Yue, J.J. Chen, C.X. Cong, J.L. Wang, J.Y. Kang, J.H. Chu, and Z.L. Fang*,
β-Ga2O3 Van der Waals p-n homojunction,
Mater. Today Phys. 44 (2024) 101447.（氧化镓范德华同质pn结，google引用6次）
9. H.C. Zhai, C.X. Liu, Z.Y. Wu., C.C. Ma, P.F. Tian, J. Wan, J.Y. Kang, J.H. Chu, and Z.L. Fang*,
Full β-Ga2O3 films-based p-n homojunction,
Sci. China Mater. 67 (2024) 898-905. （首次报道了氧化镓薄膜单边突变同质pn结，google引用6次）
8. C.C. Ma, Z.Y. Wu, H. Zhang, H.Y. Zhu, J.Y. Kang, J.H. Chu, and Z.L. Fang*,
P-type nitrogen-doped β-Ga2O3: the role of stable shallow acceptor NO–VGa complexes,
Phys. Chem. Chem. Phys. 25 (2023) 13766-13771. （氮掺杂氧化镓p型导电机制，google引用15次）
7. Y. Chen, L. Peng, Y. Wu, C.C. Ma, A. Wu, H. Zhang, and Z.L. Fang*,
Anomalous Temperature-Dependent Phonon Anharmonicity and Strain Engineering of Thermal Conductivity in β-Ga2O3,
J. Phys. Chem. C 127 (2023) 13356-13363. （氧化镓热输运研究，google引用11次）
6. Y. Chen, A. Wu, Y. Zhang, Y. Wu, Y. Xia, C.C. Ma, H.Y. Zhu, H. Zhang, and Z.L. Fang*,
Full-momentum exciton landscape and macroscopic quantum phase diagram in two-dimensional gallium oxides, Mater. Today Phys. 29 (2022) 100903. （氧化镓激子研究）
5. C.C. Ma, Z.Y. Wu, Z.X. Jiang, Y. Chen, W. Ruan, H. Zhang, H.Y. Zhu, G.Q. Zhang, J.Y. Kang, T.-Y. Zhang, J.H. Chu and Z.L. Fang*,
Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility,
J. Mater. Chem. C 10 (2022) 6673-6681.（氮掺杂氧化镓p型导电机制，google引用53次）
4. H.C. Zhai, Z.Y. Wu, and Z.L. Fang*, Recent progress of Ga2O3-based gas sensors,
Ceram. Inter. 48 (2022) 24213-24233.（氧化镓气敏传感，google引用69次）
3. Z.Y. Wu, Z.X. Jiang, C.C. Ma, W. Ruan, Y. Chen, H. Zhang, G.Q. Zhang, Z.L. Fang*, J.Y. Kang, and T.-Y. Zhang,
Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films,
Mater. Today Phys. 17 (2021) 100356.（P型氮掺杂氧化镓薄膜生长机制，google引用83次）
2. Z.X. Jiang, Z.Y. Wu, C.C. Ma, J.N. Deng, H. Zhang, Y. Xu, J.D. Ye, Z.L. Fang*, G.Q. Zhang, J.Y. Kang, and T.-Y. Zhang,
P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product,
Mater. Today Phys. 14 (2020) 100226.（首次报道了常温稳定的P型氧化镓薄膜，google引用123次）
1. Z.Y. Wu, Z.X. Jiang, P.Y. Song, P.F. Tian, L.G. Hu, R. Liu, Z.L. Fang*, J.Y. Kang, and T.Y. Zhang,
Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio,
small 15 (2019) 1900580. （google引用62次）
专著列表：
4. 方志来*，《书院的理念与探索 复旦大学书院讲演录II》，第56-63页，“第三代半导体”，2019，复旦大学出版社，ISBN: 978-7-309-14365-2。
3. 方志来*等，《笃行南强路—纪念厦门大学半导体学科建设六十周年》，第123-128页，“单芯片无荧光粉白光LED研究”，康俊勇 编，2017，厦门大学出版社，ISBN：9787561566930。
2. Zhilai Fang, "Applications of surface/interface modification in group-III nitrides", in: A. Umar (Eds.), 《Encyclopedia of
Semiconductor Nanotechnology》, American Scientific Publishers, 2017, Valencia, CA, Chap. 4, Vol. 1, pp. 1-57, ISBN: 1-58883-199-X.
1. Zhilai Fang, "Monolithic Phosphor-Free White Emission by InGaN/GaN Quantum Wells" in《Horizons in World Physics, Volume 280》,
Chapter 2, pp. 69-96, Edited by A. Reimer, Nova Science Publishers, ISBN: 978-1-62417-321-9, 2013.
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